SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The VRF152GMP is an RF MOSFET transistor manufactured by Microchip Technology. It utilizes Silicon technology and features an N-Channel configuration within the M208 package. Key electrical parameters include a drain-source breakdown voltage of 130 V, a continuous drain current of 17 A, and a maximum power output of 150 W. The device operates at a frequency of 175 MHz with a gain of 18 dB. It supports screw mount installation and functions within a temperature range of -65°C to +150°C.
Verify the specific datasheet revision and component marking against official Microchip documentation prior to procurement. Confirm that the M208 package dimensions and pinout align with the target PCB footprint. Ensure compliance with RoHS directives as specified in the manufacturer's product compliance statements. Cross-reference the part number suffix to confirm matched pair status.
Select this component when designing circuits requiring a 130 V breakdown voltage and 150 W power handling at 175 MHz. The M208 package facilitates screw mounting for effective heat dissipation. Consider the matched pair nature if differential or push-pull topologies are required. Evaluate thermal management requirements based on the specified operating temperature limits.
This device belongs to the VRF series of high-voltage power discrete RF MOSFETs from Microchip Technology. It is designed for demanding radio frequency applications where high power density and reliability are critical. The M208 package provides a standardized form factor for integration into industrial and commercial RF systems.
The VRF150MP is a related matched pair variant within the same family, offering similar power characteristics but differing in voltage ratings and frequency specifications. Verify compatibility before substitution.