VRF161

Overview

The VRF161 is an N-channel RF MOSFET transistor manufactured by Microchip Technology. It operates at a frequency of 30 MHz with a gain of 24 dB. The device features a drain-source breakdown voltage (VDS) of 180 V and a continuous drain current of 20 A. It delivers an output power of 200 W and is housed in the M174 package.

Feature Summary

• N-channel silicon RF MOSFET construction
• High power output capability for RF applications
• Integrated matching network design

Applications

• RF power amplification
• Broadband amplifier stages
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the specific datasheet revision and electrical test conditions provided by Microchip Technology before integration. Confirm that the M174 package thermal requirements match the system design. Ensure compatibility with the intended RF frequency range of 30 MHz. Cross-reference pinouts with official documentation to prevent circuit errors during assembly.

Selection Notes

Select this component for designs requiring 200 W output power at 30 MHz. The 180 V breakdown voltage supports high-voltage RF operations. The integrated matching network simplifies circuit layout. Verify thermal management capabilities for the M174 package under continuous wave operation.

Part Context

This part belongs to the VRF series of radio frequency power transistors from Microchip Technology. These devices are engineered for robust performance in demanding RF environments. The series typically includes matched pairs or single units optimized for specific frequency bands and power levels.

Replacement Considerations

Consult Microchip Technology for officially confirmed substitute part numbers. Do not assume functional equivalence with other RF MOSFETs without verifying electrical parameters and package dimensions.