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The VRF164FLMP is an N-Channel silicon RF MOSFET transistor manufactured by Microchip Technology. It features a drain-source breakdown voltage of 180 V and a continuous drain current of 75 A. The device supports operation up to a maximum junction temperature of +200°C and utilizes screw mount installation. Key electrical specifications include a forward transconductance minimum of 20 mOhm, a gate-source voltage range of -40 V to 40 V, and a threshold voltage of 3.6 V. The component is designed for high-power radio frequency applications.
Verify the specific suffix 'FLMP' against the official Microchip datasheet to confirm exact binning and testing parameters. Ensure that the procurement channel provides genuine components with traceable origin. Confirm that the screw mount package type matches the intended heatsink interface requirements for the final assembly design.
Select this component when designing circuits requiring high voltage handling and significant current capacity in RF environments. Consider the +200°C maximum operating temperature rating for high-stress thermal management scenarios. Evaluate the 180 V breakdown voltage against peak signal swings to ensure adequate safety margins during operation.
This part belongs to the VRF series of radio frequency power MOSFETs from Microchip Technology. These devices are engineered specifically for demanding RF power applications where reliability and high efficiency are critical. The series typically targets industrial and commercial sectors requiring robust semiconductor solutions for signal generation and amplification.
Consult the official Microchip documentation for verified cross-reference part numbers. Do not substitute with generic RF MOSFETs without verifying pinout compatibility and electrical parameter alignment.