VRF2933FL

Overview

The VRF2933FL is a gold metalized N-channel MOS field-effect RF power transistor manufactured by Microsemi. It is designed for large signal applications up to 150 MHz with a drain voltage of 50 V. The device delivers a minimum output power of 300 W with 20 dB gain at 30 MHz. It features a thermally enhanced package for lower junction temperatures and excellent thermal stability.

Feature Summary

• Gold metalization for superior reliability
• Excellent thermal stability
• Common source configuration
• Thermally enhanced packaging

Applications

• ISM band applications
• High reliability RF amplification
• Rugged RF power stages

Procurement Notes

Verify the specific suffix FL against official Microchip/Microsemi documentation to confirm package and material specifications. Ensure compatibility with existing thermal management designs due to the thermally enhanced package structure. Confirm RoHS compliance status if required for your assembly process.

Selection Notes

Select this component for high-power RF applications requiring operation up to 150 MHz. The common source configuration and gold metalization make it suitable for environments demanding high ruggedness. Evaluate thermal resistance requirements to ensure the package meets the system's heat dissipation needs.

Part Context

This part belongs to the family of RF power MOSFETs from Microsemi, now part of Microchip Technology. These devices are engineered for robust performance in demanding radio frequency environments. The VRF2933 series specifically targets applications where high output power and gain are critical.

Replacement Considerations

VRF2933MP is a listed similar level part with the same pinout and package.