VRF2944

Overview

The VRF2944 is a gold-metallized silicon n-channel RF power vertical MOSFET designed for broadband commercial and military applications. It delivers 400W output power with 22dB typical gain at 30MHz and 50V supply voltage. The device features a common source configuration, nitride passivation, and a thermally enhanced M177 package. It supports a 3:1 load VSWR capability and operates up to 150MHz.

Feature Summary

• High power density with 400W output and 22dB gain at 30MHz
• Robust construction with 170V breakdown voltage and 3:1 VSWR tolerance
• Low inter-modulation distortion and excellent stability
• Available in matched pairs for balanced amplifier configurations

Applications

• Broadband commercial RF power amplifiers
• Military communication systems requiring high reliability
• High-power transmitter stages
• Balanced push-pull amplifier designs using matched pairs

Procurement Notes

Verify the specific suffix (MP) when ordering to ensure receipt of matched pairs with aligned gate threshold voltages. Confirm that handling procedures account for the beryllium oxide substrate within the ceramic package to prevent exposure to toxic dust during mounting or mechanical stress.

Selection Notes

Select this component for applications demanding high linearity and ruggedness in RF environments. Ensure the design accommodates the M177 screw-mount footprint and provides adequate thermal management for the junction-to-case resistance. Verify that the system can handle the specified drain-source voltage and continuous current ratings under worst-case operating conditions.

Part Context

This transistor serves as a higher power variant within the Microsemi RF MOSFET lineup, offering increased output compared to the VRF2933. It utilizes refractory gold metallization and nitride passivation to enhance performance and longevity in demanding RF power applications.

Replacement Considerations

The VRF2933 is documented as a lower power version within the same family. Direct substitution requires verification of power handling and thermal requirements.