VS-12CTQ045S-M3

$0.43

Description：DIODE ARRAY SCHOT 45V 6A TO263AB
Series：-

SKU:8f9e5c97bb6c Category: Diode Arrays Brand: Vishay General Semiconductor - Diodes Division

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

VS-12CTQ045S-M3 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARRAY SCHOT 45V 6A TO263AB. Review the specifications below when checking this part for your BOM.

Diode Arrays specifications for VS-12CTQ045S-M3

Description：DIODE ARRAY SCHOT 45V 6A TO263AB
Series：-
Mfr：Vishay General Semiconductor - Diodes Division
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：Schottky
Voltage - DC Reverse (Vr) (Max)：45 V
Current - Average Rectified (Io) (per Diode)：6A
Voltage - Forward (Vf) (Max) @ If：600 mV @ 6 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr：800 µA @ 45 V
Operating Temperature - Junction：-55°C ~ 175°C
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：TO-263AB (D2PAK)
Grade：-
Qualification：-

Diode Arrays datasheet and documents for VS-12CTQ045S-M3

VS-12CTQ045S-M3

Diode Arrays Overview

The VS-12CTQ045S-M3 is a high-performance Schottky rectifier featuring a dual anode common cathode configuration in a D2PAK (TO-263AB) package. It provides a maximum average forward current of 12 A per device and supports a maximum repetitive peak reverse voltage of 45 V. The component operates reliably up to a junction temperature of 175 °C, with a typical forward voltage drop of 0.53 V at 6 A and 125 °C.

Diode Arrays Feature Summary

Center tap configuration optimized for low reverse leakage at elevated temperatures
Proprietary barrier technology enabling reliable operation up to 175 °C junction temperature
High purity, high temperature epoxy encapsulation providing enhanced mechanical strength and moisture resistance

Diode Arrays Applications

Switching power supplies
Converters
Freewheeling diodes
Reverse battery protection

Diode Arrays Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to ensure correct packaging and orientation. Confirm that the selected variant matches the required thermal and electrical specifications for the intended application environment. Cross-reference the document number and revision date to access the most current technical parameters and compliance information.

Diode Arrays Selection Notes

Select this component when a center tap configuration is required for applications demanding low forward voltage drop and high frequency operation. Ensure the design accommodates the specified thermal resistance values and maximum surge current ratings. Validate that the operating junction temperature remains within the -55 °C to +175 °C range under all expected load conditions.

Diode Arrays Part Context

This part belongs to the VS-12CTQ...S-M3 series of high performance Schottky rectifiers manufactured by Vishay Semiconductors. The series utilizes proprietary barrier technology to achieve low reverse leakage characteristics. These devices are designed for robust performance in switching power supplies and converters where high reliability and efficiency are critical requirements.