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The VS-CPV362M4FPBF is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Vishay Semiconductors. It features a Hex configuration and utilizes an IMS-2-13 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage (VCEO) of 600 V and a gate-emitter voltage range of -20 V to +20 V. It operates within a temperature range of -40°C to +150°C. The component has a maximum continuous collector current (Ic) of 11 A and weighs approximately 20 g.
Verify the specific suffix 'FPBF' against official Vishay documentation to confirm pinout and packaging details, as variations exist within the CPV series. Ensure the IMS-2-13 package footprint matches the target PCB design. Confirm RoHS compliance status directly from the manufacturer's datasheet before finalizing procurement specifications.
Select this component when a 600 V IGBT with 11 A continuous current rating is required in a through-hole format. The Hex configuration suggests suitability for applications needing built-in protection features. Compare thermal resistance values in the datasheet against heat sink capabilities to ensure adequate cooling for the intended duty cycle.
This part belongs to the Vishay CPV series of IGBTs, which are designed for high-efficiency power switching. The CPV line typically integrates fast recovery diodes or protection circuits within the module. The IMS-2-13 package provides a compact solution for high-power density designs compared to traditional discrete TO packages.
Publicly confirmed substitute part numbers for VS-CPV362M4FPBF were not found in the provided reference data. Verify electrical compatibility with similar Vishay CPV models such as VS-CPV363M4KPBF only if datasheet parameters align exactly.