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The VS-CPV362M4KPBF is a silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by Vishay Semiconductors. It features a Hex configuration and utilizes an IMS-2-13 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 11 A. It operates within a junction temperature range from -40 °C to +150 °C, with gate-emitter voltage limits defined between -20 V and +20 V.
Verify the specific manufacturer datasheet for the VS-CPV362M4KPBF to confirm electrical characteristics and mechanical dimensions. Ensure compatibility with existing PCB footprints and thermal management requirements before integration into designs.
Select this component based on the required 600 V blocking voltage and 11 A current handling capacity. Consider the IMS-2-13 package constraints for board space and heat dissipation needs in high-power density environments.
This IGBT belongs to the CPV series from Vishay, which focuses on efficient power switching solutions. The part number indicates specific voltage and current ratings distinct from other variants in the lineup.
Consult official substitution guides or contact Vishay support for verified equivalent parts. Do not assume pin-compatible alternatives without confirming electrical parameter alignment.