VS-GA100TS60SF

Overview

The VS-GA100TS60SFPbF is a half-bridge IGBT module utilizing standard speed PT technology and FREDpt antiparallel diodes. It features an INT-A-PAK package with Al2O3 DBC for low thermal resistance. The collector-emitter voltage (VCES) is 600 V, with a continuous collector current (IC DC) of 220 A at 25 °C case temperature. At 100 A and 25 °C, the typical collector-emitter saturation voltage (VCE(on)) is 1.11 V. The module supports junction temperatures from -40 °C to +150 °C and includes UL approval file E78996.

Feature Summary

• Standard speed PT IGBT technology optimized for hard switching applications
• Integrated FREDpt antiparallel diodes providing fast recovery characteristics
• Al2O3 Direct Bonded Copper substrate ensuring very low junction-to-case thermal resistance
• Designed for industrial level performance with direct heatsink mounting capability

Applications

• High current inverter stages for AC TIG welding machines
• Industrial motor drives and power conversion systems
• Medium frequency inverter circuits requiring robust switching performance

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm compliance requirements. Ensure that the PbF designation matches the intended lead-free specifications for your assembly process. Cross-reference the document number 94544 for the most current electrical and mechanical parameters before finalizing procurement orders.

Selection Notes

Select this component based on its 600 V blocking capability and 220 A continuous current rating at 25 °C case temperature. Evaluate the thermal resistance values to ensure adequate heatsinking for your specific duty cycle. Confirm that the gate drive requirements align with the specified threshold voltage and total gate charge parameters for optimal switching performance.

Part Context

This module belongs to Vishay's INT-A-PAK series of insulated gate bipolar transistors. It integrates a standard speed IGBT switch with a complementary fast recovery epitaxial diode in a single half-bridge configuration. The design focuses on minimizing conduction losses while maintaining reliable switching behavior in high-power industrial environments.

Replacement Considerations

Consult official cross-reference lists or distributor databases for verified equivalent part numbers. Ensure any substitute maintains matching voltage ratings, current capabilities, and pinout configurations. Verify thermal interface compatibility and mounting torque specifications to preserve system reliability.

FAQ

What is the maximum repetitive off-state voltage for this module?

The maximum collector to emitter voltage (VCES) is rated at 600 V.

How does the forward voltage drop of the antiparallel diode vary with temperature?

At 100 A, the typical forward voltage drop decreases from 1.44 V at 25 °C to 1.25 V at 125 °C junction temperature.

What is the isolation voltage rating between terminals and the case?

The RMS isolation voltage is 2500 V when measured between any terminal and the case for one minute.