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The VS-GA250SA60S is a single Insulated Gate Bipolar Transistor (IGBT) module manufactured by Vishay General Semiconductor. It features an ultralow collector-emitter saturation voltage (VCE(on)) design, optimized for high-efficiency power conversion applications. The device is rated for a maximum collector-emitter voltage of 600 V and supports a continuous collector current of 250 A. Key electrical parameters include a maximum gate-emitter threshold voltage of 2 V and a maximum gate trigger current of 45 mA. The module utilizes a SOT-227 chassis mount package, facilitating robust thermal management in industrial environments.
Verify the specific revision status and lead times directly with authorized distributors, as component availability may fluctuate. Confirm that the SOT-227 mounting interface matches your mechanical design requirements. Ensure proper handling procedures are followed due to the sensitivity of semiconductor junctions during installation.
Select this component when low conduction losses are critical for system efficiency. The 600 V rating suits medium-voltage AC/DC conversion systems. Evaluate thermal resistance characteristics against your heatsink capabilities to ensure safe operating temperatures under full load conditions.
This part belongs to Vishay's VS-GA series of IGBT modules, which are engineered for high-current industrial applications. The series emphasizes reduced on-state voltage drops to minimize power dissipation. The VS-GA250SA60S represents a specific variant within this lineup, tailored for 250 A continuous current operations in compact chassis-mounted form factors.
The VS-GT250SA60S is documented as a similar alternative product. Verify pin compatibility and thermal specifications before substitution.