VS-GB100LH120N

VS-GB100LH120N

  • Description:IGBT MOD 1200V 200A INT-A-PAK
  • Series:-

SKU:3da872f5d998 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1200V 200A INT-A-PAK
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Single
  • Vce(on) (Max) @ Vge, Ic:1.77V @ 15V, 100A (Typ)
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Double INT-A-PAK (3 + 4)
  • Supplier Device Package:Double INT-A-PAK
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):200 A
  • Power - Max:833 W
  • Current - Collector Cutoff (Max):1 mA
  • Input Capacitance (Cies) @ Vce:8.96 nF @ 25 V

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VS-GB100LH120N

Overview

The VS-GB100LH120N is a single IGBT module from Vishay General Semiconductor, designed for high-power applications. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 200 A. The module delivers a maximum power rating of 833 W with a typical saturation voltage of 2V at 15V gate drive and 300A. Input capacitance is specified as 21 nF at 25V. It operates within a junction temperature range of -40°C to 150°C and utilizes a chassis mount configuration in a Double INT-A-PAK package.

Feature Summary

  • Single IGBT configuration for robust power switching
  • High voltage handling capability up to 1200 V
  • Optimized thermal performance via chassis mounting
  • Standard gate input interface for easy integration

Applications

  • Industrial motor drives
  • Power supply inverters
  • Welding equipment

Procurement Notes

Verify the specific suffix and revision code against the manufacturer's latest datasheet to ensure compatibility with your system requirements. Confirm that the Double INT-A-PAK package dimensions match your thermal management design. Check for any recent product lifecycle changes or obsolescence notices directly from Vishay before finalizing procurement plans.

Selection Notes

Select this component when a single IGBT with 1200 V blocking capability and 200 A current rating is required. Consider the 833 W power dissipation limit and the need for chassis mounting infrastructure. Ensure the control circuitry supports the standard gate drive specifications and that the operating environment stays within the -40°C to 150°C junction temperature range.

Part Context

This module belongs to Vishay's INT-A-PAK series, which provides compact, high-current solutions for industrial power electronics. The VS-GB100LH120N specifically targets applications requiring reliable single-switch operation with moderate power levels, offering a balance between performance and thermal efficiency in a standardized package format.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult Vishay's official cross-reference tools or contact the manufacturer directly for verified alternative components.

VS-GB100LH120NVS-GB100LH120N

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