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The VS-GB100LH120N is a single IGBT module from Vishay General Semiconductor, designed for high-power applications. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 200 A. The module delivers a maximum power rating of 833 W with a typical saturation voltage of 2V at 15V gate drive and 300A. Input capacitance is specified as 21 nF at 25V. It operates within a junction temperature range of -40°C to 150°C and utilizes a chassis mount configuration in a Double INT-A-PAK package.
Verify the specific suffix and revision code against the manufacturer's latest datasheet to ensure compatibility with your system requirements. Confirm that the Double INT-A-PAK package dimensions match your thermal management design. Check for any recent product lifecycle changes or obsolescence notices directly from Vishay before finalizing procurement plans.
Select this component when a single IGBT with 1200 V blocking capability and 200 A current rating is required. Consider the 833 W power dissipation limit and the need for chassis mounting infrastructure. Ensure the control circuitry supports the standard gate drive specifications and that the operating environment stays within the -40°C to 150°C junction temperature range.
This module belongs to Vishay's INT-A-PAK series, which provides compact, high-current solutions for industrial power electronics. The VS-GB100LH120N specifically targets applications requiring reliable single-switch operation with moderate power levels, offering a balance between performance and thermal efficiency in a standardized package format.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Vishay's official cross-reference tools or contact the manufacturer directly for verified alternative components.