VS-GB100TH120N

VS-GB100TH120N

  • Description:IGBT MOD 1200V 200A INT-A-PAK
  • Series:-

SKU:293c7c0c4933 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1200V 200A INT-A-PAK
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Bulk
  • IGBT Type:-
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:2.35V @ 15V, 100A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Double INT-A-PAK (3 + 4)
  • Supplier Device Package:Double INT-A-PAK
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):200 A
  • Power - Max:833 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:8.58 nF @ 25 V

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VS-GB100TH120N

Part Context

The VS-GB100TH120N is an IGBT module from Vishay General Semiconductor - Diodes Division. It utilizes the INT-A-PAK package and is rated for 1200V. The component is listed as obsolete or discontinued in available records.

VS-GB100TH120NVS-GB100TH120N

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