VS-GB50NA120UX

Overview

The VS-GB50NA120UX is a Vishay Semiconductors 'High Side Chopper' IGBT module utilizing NPT Gen 5 technology. It features an integrated HEXFRED clamping diode within a fully isolated SOT-227 package. The device supports a collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 92 °C. Typical saturation voltage is 3.22 V at 50 A and 25 °C, with switching capabilities optimized for frequencies between 8 kHz and 30 kHz. Key electrical parameters include a maximum RMS isolation voltage of 2500 V and a typical internal inductance of ≤ 5 nH.

Feature Summary

• NPT Gen 5 IGBT technology providing a square Reverse Bias Safe Operating Area (RBSOA) and positive VCE(on) temperature coefficient for easy parallel operation.
• Integrated HEXFRED clamping diode designed to reduce electromagnetic interference and minimize snubber requirements.
• Fully isolated SOT-227 package with very low internal inductance, allowing direct mounting on heatsinks and plug-in compatibility with standard outlines.

Applications

• Uninterruptible Power Supplies (UPS)
• Switching Mode Power Supplies (SMPS)
• Induction Heating Systems
• Power Welding Equipment

Procurement Notes

Verify the specific revision date against the manufacturer's official documentation before finalizing procurement. Confirm that the required thermal interface material and mounting torque specifications align with the mechanical outline dimensions provided in the datasheet. Ensure that the application environment remains within the specified junction and storage temperature ranges to maintain product reliability and compliance with safety standards.

Selection Notes

Select this component when designing high-side chopper circuits requiring robust reverse bias safe operating area characteristics. The positive temperature coefficient of the saturation voltage facilitates reliable parallel operation without complex current balancing circuitry. Consider the integrated clamping diode for applications prioritizing reduced EMI and simplified snubber design over discrete solutions.

Part Context

This module belongs to Vishay's output and switching modules series, specifically categorized as an ultrafast IGBT. It is part of the GB50NA family, distinguished by its NPT Gen 5 technology and SOT-227 form factor. The 'X' suffix indicates the inclusion of the HEXFRED diode, differentiating it from standard IGBT modules lacking integrated fast recovery components.

Replacement Considerations

Direct replacements must match the SOT-227 outline and 1200 V / 50 A ratings. Verify that substitute modules offer comparable RBSOA performance and similar gate charge characteristics to ensure driver compatibility. Check if alternative packages require modified PCB layouts or heatsinking interfaces due to dimensional differences.

FAQ

What is the typical internal inductance of the VS-GB50NA120UX?

The typical internal inductance is ≤ 5 nH, which helps reduce electromagnetic interference and requires less snubbing.

How does the VCE(on) behave with temperature changes?

The device features a positive VCE(on) temperature coefficient, which facilitates easy assembly and parallel operation of multiple units.

What is the maximum RMS isolation voltage rating?

The maximum RMS isolation voltage is 2500 V, measured between any terminal and the case for 1 minute.