VS-GB70LA60UF

Overview

The Vishay VS-GB70LA60UF is a Low Side Chopper IGBT module in an SOT-227 package, integrating an ultrafast IGBT with a FRED Pt hyperfast rectifier. It features NPT Warp 2 Speed technology with a positive temperature coefficient and square RBSOA. Key electrical ratings include a collector-emitter voltage of 600 V, continuous collector current of 70 A at 88 °C, and continuous forward diode current of 70 A at 86 °C. The typical saturated collector-emitter voltage is 2.23 V at 70 A and 25 °C. Total switching losses are 2.31 mJ (turn-on) and 1.16 mJ (turn-off) at 70 A, 360 V, and 25 °C.

Feature Summary

• NPT Warp 2 Speed IGBT technology providing a positive temperature coefficient for safe parallel operation
• Fully isolated SOT-227 package enabling direct heatsink mounting and plug-in compatibility
• Integrated FRED Pt hyperfast rectifier designed to minimize reverse recovery charge and switching losses
• Very low internal inductance (≤ 5 nH typical) supporting high-frequency operation up to 150 kHz

Applications

• Uninterruptible Power Supplies (UPS)
• Switched Mode Power Supplies (SMPS)
• Induction Heating Systems
• Welding Equipment

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the UL approved file E78996 meets the regulatory requirements for the target end-use application. Ensure thermal interface materials are compatible with the specified maximum junction temperature range of -40 °C to 150 °C.

Selection Notes

Select this component when designing circuits requiring a single-switch topology with integrated freewheeling capability. The positive temperature coefficient facilitates easy paralleling for higher current applications. Verify that the gate drive voltage and resistance values align with the specified switching loss test conditions to achieve optimal performance.

Part Context

This device belongs to the Vishay SOT-227 generation of power modules, which standardizes the outline for various semiconductor technologies including MOSFETs and diodes. The 'L' designation indicates the Low Side Chopper circuit configuration, while the 'U' suffix denotes the Ultrafast IGBT type. This packaging allows for direct replacement in existing designs utilizing standard SOT-227 footprints.

Replacement Considerations

Direct pin-compatible replacements within the same SOT-227 family may exist but require verification of electrical parameters such as VCE(sat), switching speeds, and thermal resistance. Cross-referencing the specific circuit configuration (Low Side Chopper) is essential to ensure functional equivalence in the intended application.

FAQ

What is the typical total switching loss for the IGBT?

At IC = 70 A, VCC = 360 V, VGE = 15 V, and TJ = 25 °C, the total switching loss (Etot) is typically 2.31 mJ.

Does the module support parallel operation?

Yes, the NPT Warp 2 Speed IGBT technology features a positive temperature coefficient, which facilitates easy assembly and parallel operation.

What is the isolation voltage rating?

The RMS isolation voltage is 2500 V between any terminal and the case for a duration of 1 minute.