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The VS-GB75TP120N is a trench gate field-stop IGBT module manufactured by Vishay Semiconductors. It features an ECONO2 package with 49 pins and supports PCB mounting. The device operates as a dual half-bridge configuration with N-channel transistors. Key electrical ratings include a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A. The module is designed for switching frequencies ranging from 8 kHz to 60 kHz, with a maximum power dissipation of 375 W and a maximum junction temperature of +150 °C.
Verify the specific suffix against official datasheets to confirm pinout compatibility and thermal characteristics. Confirm RoHS compliance status through manufacturer documentation prior to integration. Ensure ordering codes match exact voltage and current requirements for the target application circuit.
Select this component when a 1200 V rating and 75 A current capacity are required in a compact ECONO2 form factor. Evaluate thermal resistance values against the system's heat sink capabilities. Compare switching losses at the intended operating frequency to ensure efficiency targets are met within the specified temperature range.
This module belongs to Vishay's ECONO2 series of discrete and power modules. It shares the mechanical footprint with other variants in the family, such as the VS-GB75YF120N, allowing for potential mechanical interchangeability if electrical parameters align with the specific design needs.
Direct substitutes may include other trench gate IGBTs in the same voltage and current class. Verify pin-to-pin compatibility before substitution. Cross-reference thermal resistance specifications to ensure equivalent cooling requirements are maintained in the existing assembly.