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Product Detailed Parameters
- Description：IGBT MOD 600V 580A INT-A-PAK
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tube
- IGBT Type：PT, Trench
- Configuration：Half Bridge
- Vce(on) (Max) @ Vge, Ic：1.45V @ 15V, 300A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Dual INT-A-PAK (3 + 8)
- Supplier Device Package：Dual INT-A-PAK
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：580 A
- Power - Max：1136 W
- Current - Collector Cutoff (Max)：150 µA
- Input Capacitance (Cies) @ Vce：-
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Overview
The VS-GP300TD60S is a dual IGBT module manufactured by Vishay General Semiconductor - Diodes Division. It utilizes a Low Profile INT-A-PAK package and incorporates Trench PT IGBT technology to form a half-bridge configuration. The device is rated for a maximum collector-emitter voltage of 600V and supports a continuous collector current of 580A. This component is designed for high-power switching applications requiring efficient thermal management and compact footprint solutions.
Feature Summary
- Integrates two Trench PT IGBTs in a single low-profile package
- Configured as a half-bridge topology for power conversion
- Features INT-A-PAK mounting style for optimized thermal performance
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency AC/DC converters
Procurement Notes
Verify the obsolete status of this specific part number before initiating any procurement process, as it is no longer manufactured. Confirm that the required technical specifications can be met by available substitute components or updated series replacements from the manufacturer. Ensure all replacement options maintain compatibility with existing system designs and thermal requirements.
Selection Notes
Select alternative components based on matching voltage ratings of 600V and current capabilities near 580A. Evaluate packages with similar thermal resistance characteristics to ensure proper heat dissipation in the target application. Consider the availability of integrated diodes within the half-bridge structure and verify switching speed parameters align with the operational frequency requirements of the intended circuit design.
Part Context
This component belongs to Vishay's range of discrete semiconductor products, specifically within their IGBT module portfolio. The VS-GP300TD60S represents a specialized solution for medium-to-high power electronics, leveraging trench gate technology for improved efficiency compared to older planar designs. It serves as a critical switching element in modern power electronic systems where reliability and power density are paramount.
Replacement Considerations
Public confirmed substitutes include the VS-GP400TD60S. Both parts share the same INT-A-PAK package and half-bridge architecture. Verify that the higher voltage rating of the substitute does not impact the specific electrical constraints of the original design.
