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The VS-GT105NA120UX is a high-side chopper IGBT module utilizing Trench technology, housed in an SOT-227 package. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 100 A at 71 °C case temperature. The device integrates a HEXFRED clamping diode and supports a 10 μs short circuit capability. Electrical specifications include a typical VCE(on) of 2.45 V at 100 A and 25 °C. Thermal resistance from junction to case is 0.27 °C/W for the IGBT and 0.37 °C/W for the diode. The component operates within a junction temperature range of -40 °C to 150 °C.
Verify datasheet revision status before design finalization as Vishay documents are subject to change without notice. Confirm thermal interface material compatibility for the specified mounting torque values. Ensure gate drive circuits accommodate the ±30 V maximum gate-to-emitter voltage limit. Validate short-circuit withstand capability against specific application fault conditions.
Select this component for applications requiring high efficiency in the 4 kHz to 30 kHz speed range. Consider the square RBSOA for robust performance under inductive load switching. Evaluate parallel operation capabilities if higher current handling is required. Verify heatsink mounting dimensions match the industry-standard SOT-227 outline.
This part belongs to the Vishay VS-GT series of high-power IGBT modules designed for demanding power conversion environments. The 'N' designation indicates a high-side chopper circuit configuration, while 'U' specifies ultrafast switching characteristics. The module combines a Trench IGBT with a fast recovery diode in a single insulated package.
The datasheet notes plug-in compatibility with other SOT-227 packages. Verify pinout alignment and thermal resistance parameters when substituting with similar high-side chopper modules from other manufacturers or different Vishay series variants.