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The VS-GT50LA65UF is a Low Side Chopper IGBT module in an SOT-227 package, rated for 650 V collector-emitter voltage and 50 A continuous collector current at 59 °C. It utilizes Trench IGBT technology with a typical VCE(on) of 1.70 V at 50 A and 25 °C. The integrated FRED Pt® Gen 4 clamping diode provides fast recovery characteristics, including a typical reverse recovery time of 89 ns at 25 °C. The device features very low internal inductance (≤ 5 nH typical) and offers full square RBSOA capability.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact circuit configuration and packaging type. Ensure that thermal interface materials and mounting torque specifications align with the datasheet requirements for reliable operation within the specified junction temperature range.
Select this component for applications requiring high efficiency and low conduction losses. Consider the thermal impedance characteristics and the need for adequate heatsinking to maintain the case temperature within limits for the desired current rating. Verify gate drive compatibility with the specified threshold voltage and total gate charge parameters.
This part belongs to Vishay's Low Side Chopper IGBT series utilizing Trench technology. It is designed for power conversion applications where high switching frequency and low loss are critical. The SOT-227 package provides industry-standard outline compatibility for easy assembly and parallel operation.
Check for alternative parts with matching voltage and current ratings, such as other SOT-227 IGBT modules from Vishay or competitors. Ensure pinout compatibility and similar thermal resistance values if direct replacement is required without PCB redesign.
The maximum junction temperature is 175 °C.
Yes, it includes a FRED Pt® Gen 4 clamping diode.
The typical reverse recovery time is 89 ns at 25 °C with IF = 50 A and dIF/dt = 500 A/μs.