VS-GT50TP120N

VS-GT50TP120N

  • Description:IGBT MOD 1200V 100A INT-A-PAK
  • Series:-

SKU:a62173a91f7b Category: Brand:

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Product Detailed Parameters

  • Description:IGBT MOD 1200V 100A INT-A-PAK
  • Series:-
  • Mfr:Vishay General Semiconductor - Diodes Division
  • Package:Bulk
  • IGBT Type:Trench
  • Configuration:Half Bridge
  • Vce(on) (Max) @ Vge, Ic:2.35V @ 15V, 50A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:INT-A-PAK (3 + 4)
  • Supplier Device Package:INT-A-PAK
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):100 A
  • Power - Max:405 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:6.24 nF @ 30 V

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VS-GT50TP120N

Overview

The VS-GT50TP120N is a 1200V, 100A Insulated Gate Bipolar Transistor (IGBT) module manufactured by Vishay General Semiconductor - Diodes Division. It utilizes the INT-A-PAK package and features a maximum junction temperature of 175°C. Key electrical specifications include an input capacitance (Cies) of 6.24 nF measured at Vce = 30V. The device is designed for chassis mounting applications.

Feature Summary

  • High voltage blocking capability of 1200V
  • High current handling capacity of 100A
  • Extended thermal operation up to 175°C junction temperature

Applications

  • Industrial motor drives
  • Power conversion systems
  • Chassis-mounted power electronics

Part Context

This component belongs to the IGBT module category within Vishay's discrete semiconductor portfolio. It is specifically engineered for high-power switching applications requiring robust thermal and electrical performance in industrial environments.

Replacement Considerations

The VS-GT50TP120N is officially marked as obsolete and is no longer manufactured by Vishay. Engineers must identify alternative sources or substitute part numbers from other manufacturers that match the 1200V/100A INT-A-PAK specifications.

VS-GT50TP120NVS-GT50TP120N

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