W958D6DBCX7I TR

Memory IC Overview

The Winbond W958D6DBCX7I TR is a 256Mb pseudo-static random access memory (PSRAM) featuring a 16-bit multiplexed address/data bus. It supports asynchronous and burst operations with a maximum clock rate of 133 MHz and a random access time of 70 ns. The device operates on VCC and VCCQ voltages ranging from 1.7V to 1.95V. It includes low-power features such as temperature-compensated refresh, partial-array refresh, and deep power-down mode. The component is housed in a 54-ball VFBGA package and functions within an operating temperature range of -40°C to +85°C.

Memory IC Feature Summary

• Supports both asynchronous and synchronous burst mode read/write operations via a multiplexed address/data bus.
• Incorporates transparent self-refresh mechanisms including temperature-compensated and partial-array refresh for optimized standby current.
• Configurable through Bus Configuration Register (BCR) and Refresh Configuration Register (RCR) for flexible system integration.

Memory IC Applications

• Low-power portable electronic devices
• Wireless communication applications
• Cellular phone systems

Memory IC Procurement Notes

Verify the specific suffix 'TR' indicates tape and reel packaging upon order confirmation. Confirm that the 'CX7I' designation aligns with the required industrial temperature grade (-40°C to +85°C) and voltage specifications (1.7V–1.95V). Ensure compatibility with the 54-ball VFBGA footprint during PCB layout finalization.

Memory IC Selection Notes

Select this component when a high-density alternative to standard SRAM or Pseudo-SRAM is required for bandwidth-intensive portable applications. The multiplexed bus reduces pin count while maintaining high-speed data transfer capabilities. Consider the configurable latency and wrap modes if interfacing with Flash-like control interfaces.

Memory IC Part Context

This part belongs to the Winbond W958D6DB series of 256Mb ADMUX PSRAM devices. These products are designed as CMOS pseudo-static random access memories utilizing a DRAM core structure. They are compliant with industry-standard CellularRAM 1.5 x16 A/D MUX specifications, targeting markets requiring seamless operation on burst Flash buses.

Memory IC Replacement Considerations

Cross-reference with other Winbond W958D6DB variants differing only in package type or temperature grade. Verify electrical compatibility with existing designs before substituting with non-Winbond equivalents due to specific register configurations.