WAB300M12BM3

WAB300M12BM3

$742.59
  • Description:MOSFET 2N-CH 1200V 382A MODULE
  • Series:-

SKU:ab948c68bb33 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 1200V 382A MODULE
  • Series:-
  • Mfr:Wolfspeed, Inc.
  • Package:Bulk
  • Technology:Silicon Carbide (SiC)
  • Configuration:2 N-Channel (Half Bridge)
  • FET Feature:-
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:382A (Tc)
  • Rds On (Max) @ Id, Vgs:5.2mOhm @ 300A, 15V
  • Vgs(th) (Max) @ Id:3.6V @ 92mA
  • Gate Charge (Qg) (Max) @ Vgs:908nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds:24500pF @ 1000V
  • Power - Max:-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Grade:-
  • Qualification:-

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WAB300M12BM3

Overview

The Wolfspeed WAB300M12BM3 is a half-bridge silicon carbide (SiC) power module featuring a 62 mm industry-standard footprint. It provides a drain-source voltage of 1200 V and supports continuous drain currents up to 382 A at 25 °C case temperature, or 270 A at 90 °C. The device utilizes third-generation switching-optimized SiC MOSFET technology with a typical on-state resistance of 4.0 mΩ at 25 °C and 6.4 mΩ at 175 °C. It operates with a maximum junction temperature of 175 °C and includes THB-80 qualification for high humidity reliability.

Feature Summary

  • Implements switching-optimized third-generation SiC MOSFET technology for low switching and conduction losses.
  • Features a low inductance design of 10.2 nH between terminals utilizing a silicon nitride insulator and copper baseplate.
  • Includes THB-80 (HV-H3TRB) qualification to ensure high reliability under high humidity operating conditions.

Applications

  • Railway & Traction systems
  • Solar inverters
  • Electric Vehicle (EV) Chargers
  • Industrial Automation & Testing

Procurement Notes

Verify the specific ordering suffix BM3 against the manufacturer's current datasheet revision to confirm pinout compatibility and electrical parameters. Ensure that gate drive requirements match the recommended static VGS range of -4 V to +15 V. Confirm thermal interface material selection aligns with the specified junction-to-case thermal resistance values for the intended application environment.

Selection Notes

Select this module when transitioning from legacy 62 mm Si IGBT packages to achieve higher system efficiency and power density. Consider the 175 °C maximum junction temperature capability for reduced cooling requirements. Evaluate the 10.2 nH stray inductance impact on switching performance and dv/dt characteristics relative to the external busbar layout and gate resistor selection.

Part Context

This component belongs to the WAB series of all-silicon carbide modules designed for industrial applications requiring high reliability. It shares the standard 62 mm form factor common across multiple Wolfspeed generations, facilitating direct mechanical integration into existing designs while upgrading to superior semiconductor performance.

Replacement Considerations

Direct replacements within the same package family include the CAB300M12BM3 and CAS300M12BM3. Verify that the alternative part number matches the required THB-80 qualification status and switching optimization level before substitution.

FAQ

What is the maximum recommended gate-source voltage for static operation?

The recommended static gate-source voltage range is -4 V to +15 V, with a maximum transient limit of +19 V.

How does the on-state resistance change at elevated temperatures?

The typical RDS(on) increases from 4.0 mΩ at 25 °C to 6.4 mΩ at 175 °C junction temperature.

Is this module qualified for high humidity environments?

Yes, the WAB300M12BM3 is THB-80 (High Temperature Bias - High Humidity Reverse Bias) qualified.

WAB300M12BM3WAB300M12BM3
$742.59
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