WAS175M12BM3

$448.33

Description：MOSFET 2N-CH 1200V 228A
Series：-

SKU:80b2d5007a51 Category: FET, MOSFET Arrays Brand: Wolfspeed, Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 228A
Series：-
Mfr：Wolfspeed, Inc.
Package：Box
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel (Half Bridge)
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：228A (Tc)
Rds On (Max) @ Id, Vgs：10.4mOhm @ 175A, 15V
Vgs(th) (Max) @ Id：3.6V @ 43mA
Gate Charge (Qg) (Max) @ Vgs：422nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：12900pF @ 800V
Power - Max：-
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：-
Grade：-
Qualification：-

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WAS175M12BM3

Overview

The WAS175M12BM3 is a silicon carbide half-bridge module rated for 1200 V and 175 A. It features an industry-standard 62 mm footprint with a copper baseplate and aluminum nitride insulator. Key electrical parameters include a drain-source breakdown voltage of 1200 V, a typical on-state resistance of 10.4 mΩ at 25°C, and a forward voltage of 1.8 V for the integrated diode. The device supports a maximum junction temperature of 175°C and operates within a case temperature range of -40°C to 125°C.

Feature Summary

Industry standard 62 mm form factor designed for system retrofitting
High humidity operation capability verified by THB-80 (HV-H3TRB) testing
Ultra-low loss performance enabling high-frequency switching operations
Zero reverse recovery from diodes and zero turn-off tail current from MOSFETs

Applications

Induction heating systems
Motor drives
Renewables energy converters
Railway auxiliary and traction power supplies
EV fast charging stations

Procurement Notes

Verify the specific ordering suffix when purchasing. The WAS175M12BM3 designation indicates the module without pre-applied phase change thermal interface material. Confirm that the required thermal management solution is sourced separately to ensure proper heat dissipation during installation.

Selection Notes

Select this component based on its 1200 V blocking capability and 175 A continuous current rating. Ensure the design accommodates the recommended gate voltage of -4 V to +15 V. Verify that the application's stray inductance requirements align with the module's internal characteristics for optimal switching performance.

Part Context

This part belongs to the BM3 family of Wolfspeed silicon carbide modules. It utilizes a dual configuration housed in a screw-mount package. The module integrates both N-channel MOSFETs and Schottky diodes into a single compact unit optimized for industrial power electronics applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should verify pin compatibility and thermal resistance specifications before considering alternative components from other manufacturers.

FAQ

Does the WAS175M12BM3 come with pre-applied thermal interface material?

No, the WAS175M12BM3 does not include pre-applied phase change thermal interface material. The variant with pre-applied material is designated as WAS175M12BM3T.