WP28007025

$71.64

Description：RF MOSFET GAN HEMT 28V DIE
Series：-

SKU:7b118f7549aa Category: RF FETs, MOSFETs Brand: WAVEPIA.,Co.Ltd

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Product introduction

Product Detailed Parameters

Description：RF MOSFET GAN HEMT 28V DIE
Series：-
Mfr：WAVEPIA.,Co.Ltd
Package：Box
Technology：GaN HEMT
Frequency：7GHz
Gain：17dB
Voltage - Test：28 V
Current Rating (Amps)：800mA
Noise Figure：-
Current - Test：100 mA
Power - Output：25W
Voltage - Rated：28 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：Die
Supplier Device Package：Die
Configuration：-

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WP28007025

Overview

The WP28007025 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) die manufactured by WAVEPIA Co., Ltd. It operates at a drain voltage of 28V with a breakdown voltage of 160V and supports frequencies up to 7 GHz. At 2.45 GHz, the device delivers a typical saturated output power (Psat) of 25W, small signal gain exceeding 17 dB, and drain efficiency greater than 70%. The die dimensions are 1750 x 885 microns with a thickness of 100 microns.

Feature Summary

High breakdown voltage capability for robust operation
Supports high-efficiency amplification in RF applications
Reliability monitoring support integrated into design

Applications

ISM-band Amplifiers
C-band Amplifiers
Broadband Amplifiers
Base Station Communication
Drone, UAV
Satellite Communications
Radar Application

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the received bare die matches the specified package type and dimensions. Review the latest datasheet version for any updates to electrical characteristics or handling procedures before integration.

Selection Notes

Select this component for designs requiring high power density and wide bandwidth in the C-band and ISM bands. Ensure the thermal management system can handle the junction-to-case thermal resistance. Verify that the biasing circuitry supports the required 28V drain voltage and gate threshold specifications.

Part Context

This part belongs to the WAVEPIA GaN HEMT family, specifically designed for high-power RF applications. The naming convention indicates a 28V drain voltage, DC to 7GHz frequency range, and 25W output power capability. It serves as a bare die solution for custom amplifier modules.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Evaluate alternative GaN HEMT dies based on matching voltage ratings, power output, and frequency response requirements.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.