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The WP2806008UH(S) is an unmatched Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for high-power RF applications. It operates up to 6 GHz with a drain-source voltage rating of 160 V and a typical operating voltage of 28 V. At 4.7 GHz, the device delivers a small signal gain of 14 dB and a saturated output power (PSAT) of 11.7 W. The typical pulsed drain efficiency at PSAT is 61%. The component is available in surface mount (S) or through-hole (H) configurations within the 360BH package type.
Verify the specific package suffix required for your design: 'S' denotes a surface mount variant, while 'H' indicates a through-hole configuration. Confirm that the ordering part number matches the intended mechanical footprint. Ensure all electrical parameters align with the official datasheet specifications before finalizing procurement orders.
Select this component for broadband amplifier designs requiring high power output up to 6 GHz. The device supports a 28 V supply rail and offers high efficiency at saturation. Consider thermal management requirements due to the maximum junction temperature limit of 225 °C. Evaluate the mismatch stress tolerance, which withstands a VSWR of 10:1 without damage.
This part belongs to the WAVEPIA GaN HEMT family, specifically engineered for solid-state RF module designers. The naming convention indicates a 28 V drain voltage, DC to 6 GHz frequency range, and approximately 8 W nominal output power classification. The 'U' designation confirms it is an unmatched transistor rather than a matched pair.
Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult WAVEPIA directly for compatible alternatives or updated series replacements.