WP2806008UH

WP2806008UH

$37.87
  • Description:RF MOSFET GAN HEMT 28V 360BH
  • Series:-

SKU:1b32e3b8a19a Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET GAN HEMT 28V 360BH
  • Series:-
  • Mfr:WAVEPIA.,Co.Ltd
  • Package:Box
  • Technology:GaN HEMT
  • Frequency:6GHz
  • Gain:11dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:70 mA
  • Power - Output:6W
  • Voltage - Rated:160 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:360BH
  • Supplier Device Package:360BH
  • Configuration:-

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WP2806008UH

Overview

The WP2806008UH(S) is an unmatched Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for high-power RF applications. It operates up to 6 GHz with a drain-source voltage rating of 160 V and a typical operating voltage of 28 V. At 4.7 GHz, the device delivers a small signal gain of 14 dB and a saturated output power (PSAT) of 11.7 W. The typical pulsed drain efficiency at PSAT is 61%. The component is available in surface mount (S) or through-hole (H) configurations within the 360BH package type.

Feature Summary

  • High breakdown voltage capability supporting robust operation in demanding RF environments
  • Broadband performance suitable for multi-standard wireless infrastructure
  • High power density with significant saturated output power capabilities

Applications

  • Cellular Infrastructure
  • Radar Application
  • Test Instrumentation
  • WiMAX, LTE, WCDMA, GSM Systems

Procurement Notes

Verify the specific package suffix required for your design: 'S' denotes a surface mount variant, while 'H' indicates a through-hole configuration. Confirm that the ordering part number matches the intended mechanical footprint. Ensure all electrical parameters align with the official datasheet specifications before finalizing procurement orders.

Selection Notes

Select this component for broadband amplifier designs requiring high power output up to 6 GHz. The device supports a 28 V supply rail and offers high efficiency at saturation. Consider thermal management requirements due to the maximum junction temperature limit of 225 °C. Evaluate the mismatch stress tolerance, which withstands a VSWR of 10:1 without damage.

Part Context

This part belongs to the WAVEPIA GaN HEMT family, specifically engineered for solid-state RF module designers. The naming convention indicates a 28 V drain voltage, DC to 6 GHz frequency range, and approximately 8 W nominal output power classification. The 'U' designation confirms it is an unmatched transistor rather than a matched pair.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult WAVEPIA directly for compatible alternatives or updated series replacements.

WP2806008UHWP2806008UH
$37.87
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