WP2806025UH

Overview

The WP2806025UH is an unmatched Gallium Nitride High Electron Mobility Transistor (GaN HEMT) designed for high-power RF applications. It operates with a drain voltage of 28V and supports frequencies up to 6GHz. At 2.45GHz, the device delivers a typical saturated output power (PSAT) of 45.4dBm, small signal gain of 17.4dB, and pulsed drain efficiency of 78.3%. The component utilizes a 360BH through-hole package and features a maximum drain-source breakdown voltage of 160V.

Feature Summary

• High-efficiency GaN HEMT technology optimized for broadband amplification
• Capable of operation at frequencies up to 6GHz with high output power
• Robust electrical ratings including 160V drain-source breakdown voltage

Applications

• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• WiMAX, LTE, WCDMA, GSM Systems
• Radar Applications

Procurement Notes

Verify the specific package suffix when ordering; 'H' denotes the 360BH through-hole variant while 'S' indicates surface mount. Confirm that the required operating conditions align with the specified absolute maximum ratings, particularly regarding junction temperature limits and current constraints for long-term reliability. Ensure compatibility with the intended PCB layout and thermal management requirements before finalizing procurement.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the sub-6GHz spectrum. The 28V supply requirement must be accommodated by the power stage design. Consider the 360BH through-hole package for mechanical stability in high-power modules. Evaluate thermal dissipation needs carefully, as continuous use at maximum temperatures impacts mean time between failures.

Part Context

This part belongs to the WAVEPIA WP series of GaN HEMTs, where the numbering indicates key parameters: 28V drain voltage, DC to 6GHz frequency range, and 25W output power capability. The 'U' signifies an unmatched transistor configuration, allowing designers to implement custom matching networks tailored to specific impedance requirements and application bandwidths.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult WAVEPIA directly for qualified alternatives or cross-reference options based on specific pinout and electrical parameter matches.