WPGM0206012

$425.00

Description：RF MOSFET GAN 48V DIE 2PCS/PK
Series：-

SKU:a8fa94defc1a Category: RF FETs, MOSFETs Brand: WAVEPIA.,Co.Ltd

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Product introduction

Product Detailed Parameters

Description：RF MOSFET GAN 48V DIE 2PCS/PK
Series：-
Mfr：WAVEPIA.,Co.Ltd
Package：Bulk
Technology：GaN
Frequency：2GHz ~ 6GHz
Gain：9.6dB
Voltage - Test：48 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：610 mA
Power - Output：41dBm
Voltage - Rated：50 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：Die
Supplier Device Package：Die
Configuration：-

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WPGM0206012

Overview

The WPGM0206012 is an RF GaN HEMT MMIC die manufactured by WAVEPIA Co., Ltd. It operates within a frequency range of 2 GHz to 6 GHz. The device features a rated voltage of 48 V and a current rating of 610 mA. Key performance metrics include a gain of 9.6 dB and an output power of 41 dBm. The component is supplied in bulk packaging containing two pieces per pack.

Feature Summary

Utilizes Gallium Nitride High Electron Mobility Transistor (HEMT) technology for high-frequency operation.
Designed as a bare die MMIC suitable for integration into custom RF circuits.
Capable of delivering significant output power within the specified microwave frequency band.

Applications

RF power amplification in microwave communication systems
Integration into custom RF front-end modules
Military and aerospace radar applications requiring high-power density

Procurement Notes

Verify the specific datasheet requirements for thermal management and biasing conditions, as this is a bare die component. Confirm that the supplier provides the official product data sheet for accurate electrical characterization. Ensure compatibility with your substrate and packaging infrastructure before ordering.

Selection Notes

Select this component when designing circuits operating between 2 GHz and 6 GHz that require high output power and efficiency. Consider the bare die format for custom assembly processes. Evaluate the 48 V rating against your system's power supply capabilities and ensure adequate heat dissipation solutions are integrated into the design.

Part Context

This part belongs to the WAVEPIA RF GaN HEMT family, which specializes in high-performance microwave components. The manufacturer focuses on customizable RF GaN transistors and bare dies for advanced RFIC and MMIC designs. This specific model represents their capability in delivering high-power solutions for demanding RF applications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacement requires matching the electrical specifications and physical dimensions of the bare die. Consult the manufacturer for potential alternatives if this specific part number is unavailable.