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The WS1A3640-V1-R3K is an integrated asymmetric Doherty power amplifier module from MACOM Technology Solutions. It utilizes GaN-on-SiC HEMT technology to deliver high performance in the 3.3 GHz to 3.8 GHz frequency band. The device provides a typical average output power of 10W (40 dBm) with a gain of 12.5 dB. It operates at a supply voltage of 48V and requires a test current of 70mA. Packaged in a 6 mm x 6 mm LGA format, it integrates RF matching and biasing networks for efficient deployment.
Verify the specific ordering suffix '-R3K' against official MACOM documentation to confirm reel packaging specifications. Ensure compatibility with 48V supply requirements and thermal management solutions suitable for the 6x6mm LGA package. Cross-reference part numbers with authorized distributors to avoid counterfeit components.
Select this module when high linearity and efficiency are required in the 3.3-3.8 GHz band. The integrated design simplifies circuit layout by combining driver and final stages. Consider thermal dissipation capabilities due to the 10W output power density. Verify that the system supports the necessary 48V bias voltage and control signals for optimal operation.
This component belongs to the WS1A series of asymmetric Doherty power amplifier modules. These devices are designed for high-efficiency RF applications requiring robust performance in compact packages. The series leverages GaN-on-SiC technology to achieve superior power density compared to traditional semiconductor materials.
Consult MACOM datasheets for direct substitutes such as the WS1A3640-V2-R3K. Verify pinout compatibility and electrical parameter alignment before substitution. Ensure any replacement maintains the same frequency range and output power specifications.