WST4050D-GP4

Overview

The WST4050D-GP4 is a gallium nitride (GaN) high electron mobility transistor (HEMT) die manufactured by MACOM Technology Solutions. It operates from DC to 8 GHz with a drain-source voltage of 28 V and continuous drain current of 100 mA. The device delivers saturated output power ranging from 41 to 42 dBm, equivalent to approximately 12.59–15.85 W, with a gain of 6.5 dB. Designed for high-frequency RF applications, it utilizes GaN-on-SiC technology to provide superior performance compared to silicon or gallium arsenide alternatives.

Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide (GaN-on-SiC) technology for enhanced thermal and electrical performance
• Operates across a wide frequency range from DC to 8 GHz
• Provides high saturated output power capability suitable for demanding RF environments

Applications

• High-frequency radio frequency amplifier circuits
• Military and aerospace radar systems
• Electronic warfare equipment
• Satellite communication transponders

Procurement Notes

Verify the specific datasheet version and technical specifications directly from MACOM official documentation before integration. Confirm that the die form factor and mounting requirements align with your PCB design and thermal management strategy. Ensure compliance with all handling guidelines for bare die components to prevent damage during assembly.

Selection Notes

Select this component when high power density and wide bandwidth are required in a compact die format. Consider the 28 V operating voltage and 100 mA current limits against system power budgets. Evaluate the need for GaN-on-SiC technology over other semiconductor materials for improved efficiency and thermal stability in high-frequency applications.

Part Context

This part belongs to MACOM's portfolio of GaN FETs designed for robust RF performance. The WST4050D series represents a class of high-electron-mobility transistors optimized for high-power, high-frequency operations. These devices leverage the material properties of GaN to achieve higher breakdown voltages and electron velocities than traditional silicon-based solutions.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult MACOM directly for qualified alternative components or updated product line replacements.