WST4100D-GP4

Overview

The WST4100D-GP4 is a gallium nitride (GaN) high electron mobility transistor (HEMT) die manufactured by MACOM Technology Solutions. It operates within a frequency range of 0 Hz to 8 GHz and supports a drain voltage of 28 V. The device delivers an output power of 15 W with a gain of 7 dB at a test current of 100 mA. Packaged as a bare die, it utilizes GaN-on-SiC technology for superior performance compared to silicon or gallium arsenide alternatives.

Feature Summary

• Utilizes gallium nitride (GaN) HEMT technology for enhanced efficiency and thermal performance
• Operates across a wide bandwidth from DC to 8 GHz
• Designed as a bare die for flexible integration into custom RF circuits

Applications

• RF power amplification in communication systems
• Military radar transmitters
• Test and measurement equipment signal generation

Procurement Notes

Verify the specific datasheet version and application notes provided by MACOM before integration. Ensure that the design accounts for the bare die packaging requirements, including proper mounting and thermal management solutions suitable for GaN devices. Confirm that the operating conditions remain within the specified 28 V and 100 mA limits to maintain reliability.

Selection Notes

Select this component when a high-power, wideband GaN solution is required in a compact form factor. The bare die format allows for direct integration into substrates or multi-chip modules. Consider the 15 W output capability and 7 dB gain relative to system power budget requirements. Evaluate thermal dissipation needs due to the high power density inherent in GaN HEMT structures.

Part Context

This part belongs to MACOM's portfolio of GaN-on-SiC transistors designed for high-frequency applications. The WST4100D series represents a class of devices optimized for power amplification where size and weight are critical constraints. It complements other MACOM RF FETs by offering a balance of power handling and bandwidth in a semiconductor die format rather than a packaged module.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Direct replacements require matching GaN HEMT specifications, including voltage rating, frequency range, and power output. Consult MACOM technical support for equivalent or newer generation devices if availability is a concern.