WST41H0D-GP4

Overview

The WST41H0D-GP4 is a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) die manufactured by MACOM Technology Solutions. It operates from DC to 4 GHz with a test voltage of 28 V. The device features a continuous drain current of 400 mA and delivers an output power of 60 W, corresponding to approximately 47.8 dBm. It provides a gain of 8 dB at the specified test conditions. The component utilizes GaN HEMT technology and is supplied in a bare die package format for surface mount integration.

Feature Summary

• Utilizes GaN HEMT technology for high-frequency performance
• Operates across a frequency range from DC to 4 GHz
• Designed for surface mount installation as a bare die

Applications

• RF power amplifier stages
• Broadband communication systems
• Test and measurement equipment

Procurement Notes

Verify the specific datasheet version and electrical characteristics against the official MACOM documentation prior to procurement. Ensure that the receiving facility has appropriate handling procedures for bare die components, including electrostatic discharge protection and precise placement capabilities required for surface mount integration of semiconductor dies.

Selection Notes

Select this component when designing circuits requiring GaN HEMT performance within the 4 GHz bandwidth. Consider the 28 V operating voltage and 400 mA current rating for biasing requirements. Evaluate thermal management solutions suitable for bare die mounting to ensure reliable operation under the specified power dissipation conditions.

Part Context

This part belongs to MACOM's portfolio of GaN on Silicon Carbide or similar substrate RF transistors. The 'WST' prefix typically denotes a specific product line or wafer lot designation within their discrete semiconductor offerings. It is distinct from packaged modules, serving as a fundamental building block for custom RF front-end designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Cross-referencing requires direct comparison of electrical parameters such as breakdown voltage, gain, and frequency response with alternative GaN HEMT dies from other manufacturers.