WST4500D-GP4

Overview

The WST4500D-GP4 is a gallium nitride (GaN) high electron mobility transistor (HEMT) die from MACOM Technology Solutions. It operates from DC to 4 GHz with a drain-source voltage of 28 V and a test current of 400 mA. The device delivers an output power of 60 W and provides a gain of 8 dB. Designed for high-efficiency RF applications, this component utilizes GaN-on-SiC technology to offer superior performance compared to traditional silicon or gallium arsenide alternatives.

Feature Summary

• Utilizes gallium nitride on silicon carbide substrate for enhanced thermal and electrical performance
• Engineered as a bare die for integration into custom RF amplifier modules
• Supports wideband operation across the DC to 4 GHz frequency range

Applications

• High-power RF amplifier stages in communication systems
• Military radar transmitter modules
• Electronic warfare signal generation equipment

Procurement Notes

Verify that the procurement channel provides original manufacturer documentation to confirm authenticity. Ensure handling procedures account for the bare die format, which requires specialized mounting techniques. Confirm that the specific suffix matches the required electrical characteristics for your design. Request batch-specific test data if available to validate performance consistency against datasheet limits.

Selection Notes

Select this component when designing amplifiers requiring 60 W output power within the 4 GHz bandwidth. Consider the 28 V operating voltage and 400 mA current requirements for bias circuit design. Evaluate thermal management solutions suitable for bare die attachment. Compare against other MACOM GaN dies based on specific gain and linearity needs for the target application frequency.

Part Context

This part belongs to MACOM's portfolio of GaN HEMT devices designed for high-power RF applications. It represents a transition from packaged transistors to bare die solutions, allowing system integrators greater flexibility in module design. The WST series typically targets demanding environments where size, weight, and power efficiency are critical constraints.

Replacement Considerations

Consult official MACOM substitution guides for direct equivalents. Verify pin compatibility and thermal pad configurations when replacing with similar GaN dies. Ensure that any substitute part meets the same 60 W power and 4 GHz frequency specifications.