XF1001-SC-0G0T

Overview

The MACOM XF1001-SC-0G0T is a 1 W Heterojunction Field Effect Transistor (HFET) operating from DC to 6 GHz. It provides 15.5 dB gain at 1.9 GHz and 10.0 dB at 5.8 GHz, with an output IP3 of 46.5 dBm and P1dB of 30.0 dBm. The device uses an SOT-89 surface mount package and requires an 8 V drain voltage and 300 mA current for optimal performance.

Feature Summary

• High linearity performance with an output IP3 of 46.5 dBm
• Operates across a wide frequency range from DC to 6 GHz
• Housed in an industry-standard SOT-89 surface mount package

Applications

• Aerospace and Defense systems
• Wireless Networking applications
• Communication infrastructure

Procurement Notes

Verify the specific ordering suffix to confirm packaging type. The -0G0T suffix indicates a 3000-piece reel configuration, while -0G00 denotes bulk packaging. Ensure compatibility with standard SMT assembly processes and observe ESD handling precautions during installation.

Selection Notes

Select this component for designs requiring high linearity and moderate power amplification up to 6 GHz. Optimal electrical performance is achieved when biased at 8 V and 300 mA. Consider thermal management requirements due to the SOT-89 package form factor and specified power dissipation limits.

Part Context

This part belongs to the XF1001-SC series of HFETs manufactured by MACOM Technology Solutions. These devices are designed for RF applications where high linearity and broadband operation are critical. The series supports various packaging options to accommodate different manufacturing needs.

Replacement Considerations

No public confirmed substitute part numbers are available.