XGD8290TI

XGD8290TI

  • Description:IGBT N-CH 20A D2PAK
  • Series:*

SKU:41c4ff3c29b5 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT N-CH 20A D2PAK
  • Series:*
  • Mfr:Littelfuse Inc.
  • Package:Tape & Reel (TR)
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Grade:-
  • Qualification:-

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XGD8290TI

Overview

The XGD8290TI is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Littelfuse Inc. It is designed for power switching applications and features a maximum continuous collector current rating of 20A. The component utilizes a D2PAK surface-mount package, providing a compact form factor suitable for printed circuit board integration in various electronic systems.

Feature Summary

  • N-channel IGBT configuration
  • D2PAK surface-mount packaging

Applications

  • Power supply designs

Procurement Notes

Verify the specific datasheet revision and electrical characteristics directly from Littelfuse official documentation before integration. Confirm that the D2PAK footprint matches your PCB layout requirements. Ensure thermal management solutions are adequate for the 20A current rating in your specific application environment to maintain device reliability.

Selection Notes

Select this component when a 20A N-channel IGBT in a D2PAK package is required. Evaluate thermal performance and switching speed requirements against the official datasheet specifications. Ensure compatibility with gate drive circuits and verify that the package dimensions fit within the designated space on the target printed circuit board.

Part Context

This part belongs to the single IGBT product category from Littelfuse Inc. It serves as a discrete power semiconductor device intended for use in circuits requiring efficient high-current switching capabilities within a standardized surface-mount enclosure format.

XGD8290TIXGD8290TI

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