XP10A250YT

$1.58

Description：MOSFET 2N-CH 100V 2.1A PMPAK
Series：XP10A250

SKU:20f485c260c1 Category: FET, MOSFET Arrays Brand: YAGEO XSEMI

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 100V 2.1A PMPAK
Series：XP10A250
Mfr：YAGEO XSEMI
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：100V
Current - Continuous Drain (Id) @ 25°C：2.1A (Ta)
Rds On (Max) @ Id, Vgs：250mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：320pF @ 50V
Power - Max：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerTDFN
Supplier Device Package：8-PMPAK (3x3)
Grade：-
Qualification：-

Download product information

XP10A250YT

Overview

The XP10A250YT is a dual N-channel enhancement-mode MOSFET manufactured by YAGEO XSemi. It features an 8-PowerDFN package with a drain-source voltage of 100V and a continuous drain current of 2.1A. The device exhibits a maximum on-resistance of 250mΩ and a gate charge of 6nC. Operating temperatures range from -55°C to +150°C, with power dissipation rated at 2.5W.

Feature Summary

Dual N-Channel Configuration
Enhancement Mode Operation
Surface Mount Packaging

Applications

Automotive electronics
Industrial control systems
Power management circuits

Procurement Notes

Verify the specific manufacturer part number against official YAGEO XSemi documentation to ensure component authenticity. Confirm that the package type matches the required 8-PowerDFN specification for your design. Check datasheet revisions for any updates to electrical characteristics or thermal parameters before finalizing procurement.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage switching applications. Consider the 250mΩ on-resistance for efficiency requirements and the 100V rating for system voltage headroom. Ensure the PCB layout supports the thermal performance associated with the PowerDFN package.

Part Context

This component belongs to the XP series of power semiconductors designed by YAGEO XSemi. The series targets automotive and industrial sectors, focusing on analog and power semiconductor solutions. The dual configuration allows for space-saving designs in bridge or high-side/low-side driver applications.