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XP10TN028YT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists YAGEO XSEMI. Its product description is MOSFET N-CH 100V 7.5A PMPAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for XP10TN028YT
- Description：MOSFET N-CH 100V 7.5A PMPAK
- Series：XP10TN028
- Mfr：YAGEO XSEMI
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：28mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：23 nC @ 4.5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2160 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：3.125W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PMPAK® 3 x 3
- Package / Case：8-PowerDFN
Single FETs, MOSFETs datasheet and documents for XP10TN028YT
Single FETs, MOSFETs Overview
The XP10TN028YT is a dual N-channel power MOSFET manufactured by YAGEO XSemi. It features a 100V drain-source voltage rating and supports a continuous drain current of 7.5A. The device exhibits a maximum on-resistance of 28 milliohms, ensuring efficient conduction. Packaged in the PMPAK surface-mount format, it is designed for high-density applications. The component operates within a temperature range from -55°C to +150°C, providing robust thermal performance for demanding electronic circuits.
Single FETs, MOSFETs Feature Summary
- Dual N-channel configuration for compact circuit integration
- Low on-resistance for improved power efficiency
- High voltage tolerance suitable for industrial loads
Single FETs, MOSFETs Applications
- DC-DC converter modules
- Motor control driver stages
- Power management integrated circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and package marking code before procurement. Confirm that the supplier provides official YAGEO XSemi documentation. Ensure the ordering suffix matches the required reel or cut-tape quantity. Cross-reference the part number with the manufacturer's latest availability status to avoid obsolete stock issues.
Single FETs, MOSFETs Selection Notes
Select this component when a dual N-channel topology is required in a small footprint. The 28 milliohm resistance offers a balance between conduction loss and cost. Consider the PMPAK package dimensions for PCB layout constraints. Evaluate the thermal dissipation requirements against the specified power handling capabilities.
Single FETs, MOSFETs Part Context
This part belongs to the XP series of power MOSFETs from YAGEO XSemi. The series focuses on silicon-based enhancement mode devices. These components are engineered for surface-mount technology assembly. The dual channel design allows for synchronized switching operations in bridge configurations.
Single FETs, MOSFETs Replacement Considerations
Check for direct pin-compatible alternatives with similar Rds(on) and Vds ratings. Verify that any substitute maintains the same PMPAK package outline. Ensure the replacement device meets the same thermal and electrical specifications.
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