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XP2318GEN is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists YAGEO XSEMI. Its product description is MOSFET N-CH 30V 500MA SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for XP2318GEN
- Description：MOSFET N-CH 30V 500MA SOT23
- Series：XP2318
- Mfr：YAGEO XSEMI
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4V
- Rds On (Max) @ Id, Vgs：1.5Ohm @ 500mA, 4V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 4.5 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：48 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：700mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for XP2318GEN
Single FETs, MOSFETs Overview
The YAGEO XSEMI XP2318GEN is a single N-channel enhancement mode Power MOSFET designed for surface-mount applications. It features a Drain-Source Breakdown Voltage (Vds) of 30 V and supports a Continuous Drain Current (Id) of 500 mA. The device exhibits a maximum Drain-Source On-Resistance (Rds(on)) of 1.5 Ohms when tested at a Gate-Source voltage of 4 V. The Gate-Source Threshold Voltage (Vgs(th)) has a maximum value of 1.3 V. It operates within a temperature range of -55°C to +150°C with a power dissipation rating of 700 mW.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction for low-side switching applications
- Surface-mount SOT-23 package design for compact circuit board integration
- High thermal stability supporting operation up to 150°C junction temperature
Single FETs, MOSFETs Applications
- Low-voltage DC-DC converter circuits
- Battery protection and management systems
- General-purpose signal switching
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and electrical test conditions provided by YAGEO XSEMI before finalizing designs. Confirm that the SOT-23 package dimensions match your PCB footprint requirements. Ensure that the 700 mW power dissipation limit is respected under actual operating thermal conditions to maintain reliability.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring a 30 V breakdown voltage and moderate current handling capabilities. The 1.5 Ohm on-resistance is suitable for low-power switching tasks where efficiency losses are minimal. Consider the SOT-23 form factor for space-constrained layouts compared to larger through-hole alternatives.
Single FETs, MOSFETs Part Context
This part belongs to the XP2318G series of single N-channel MOSFETs manufactured by YAGEO XSEMI. The series focuses on providing reliable switching performance in small outline packages. These devices are engineered for cost-effective solutions in consumer electronics and portable battery-powered equipment.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes must match the 30 V Vds, 500 mA Id, and SOT-23-3 package constraints. Verify equivalent Rds(on) and threshold voltage specifications to ensure circuit compatibility without redesigning gate drive components.
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