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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 3.3A SOT26
- Series：-
- Mfr：YAGEO XSEMI
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3.3A (Ta), 2.3A (Ta)
- Rds On (Max) @ Id, Vgs：72mOhm @ 3A, 10V, 150mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：320pF @ 15V, 260pF @ 15V
- Power - Max：1.136W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-26
- Grade：-
- Qualification：-
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Overview
The XP2530AGY is a dual MOSFET array from YAGEO XSEMI, integrating one N-channel and one P-channel enhancement-mode transistor within a single SOT-26 surface-mount package. The device supports a drain-source voltage rating of 30 V for both channels. It provides continuous drain current ratings of 3.3 A for the N-channel and 2.3 A for the P-channel. The maximum power dissipation is specified at 1.136 W under thermal conditions. This component utilizes silicon technology and is designed for compact circuit applications requiring complementary switching.
Feature Summary
- Integrates complementary N-channel and P-channel transistors in a single package
- Supports 30 V drain-source voltage rating across both channels
- Optimized for low-profile surface-mount assembly via SOT-26 footprint
Applications
- Low-voltage DC-DC converter circuits
- Motor driver interface stages
- Load switch implementations
Procurement Notes
Verify the specific manufacturer datasheet to confirm exact electrical characteristics and thermal resistance values. Ensure that the SOT-26 package dimensions align with the target PCB layout constraints. Cross-reference the RoHS compliance status with current regulatory requirements before finalizing procurement specifications.
Selection Notes
Select this component when space-constrained designs require matched N-P channel pairs. Evaluate the distinct current ratings of 3.3 A and 2.3 A against load requirements. Consider the 1.136 W power dissipation limit for thermal management strategies in enclosed environments.
Part Context
This part belongs to the XP series of discrete semiconductors manufactured by YAGEO XSEMI. The series focuses on providing integrated solutions for power management and signal switching applications. The dual configuration reduces board space compared to using separate individual transistors.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical parameters if considering alternative dual MOSFET arrays.
