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Product Detailed Parameters
- Description：MOSFET N/P-CH 16V 3.5A SOT26
- Series：*
- Mfr：YAGEO XSEMI
- Package：Tape & Reel (TR)
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The XP2535GEY is a dual N- and P-channel enhancement mode power MOSFET manufactured by YAGEO XSEMI. It features a 20V drain-source breakdown voltage with an on-resistance of 32mΩ for the N-channel and 47mΩ for the P-channel. The device supports continuous currents of 4.6A and 3.1A respectively, housed in a compact SOT-26 surface-mount package.
Feature Summary
- Integrates complementary N- and P-channel transistors into a single dual configuration
- Optimized low on-resistance characteristics for efficient power switching applications
- Designed for high-speed operation within standard surface-mount footprint constraints
Applications
- Low-voltage DC-DC converter circuits
- Battery protection and management systems
- General-purpose load switching modules
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the received part matches the specific XP2535GEY designation and packaging format. Review the official datasheet for detailed handling instructions and storage conditions to ensure reliability.
Selection Notes
Select this component when a matched pair of N- and P-channel switches is required in a minimal footprint. The 20V rating suits low-voltage logic interfaces. Evaluate thermal performance requirements against the specified power dissipation limits for the target application environment.
Part Context
This device belongs to the XP series of power MOSFETs from YAGEO XSEMI. It provides a space-saving alternative to discrete transistor pairs. The dual configuration simplifies PCB layout for bridge drivers and synchronous rectification topologies.
Replacement Considerations
Direct substitutes include other dual N/P-channel MOSFETs in SOT-26 packages with comparable 20V ratings. Verify pinout compatibility and electrical parameters such as on-resistance and gate charge before implementation.
