XP3700M

Overview

The XP3700M is a complementary dual MOSFET from the YAGEO XSemi XP series, integrating N-channel and P-channel enhancement-mode transistors in a single PMPAK-8 surface-mount package. It features a 30 V drain-source breakdown voltage (Vds) for both channels. The N-channel configuration supports a continuous drain current of 7.3 A with an on-resistance (Rds(on)) of 18 mΩ, while the P-channel variant handles 11 A with an Rds(on) of 45 mΩ. Gate-source voltage limits are ±20 V. Thermal performance includes a power dissipation rating of 3.57 W and an operating temperature range from -55°C to +150°C.

Feature Summary

• Complementary dual configuration combining N-channel and P-channel enhancement-mode MOSFETs within a single compact footprint.

Applications

• Low-side and high-side switching circuits requiring integrated complementary pairs.

Procurement Notes

Verify the specific suffix against official documentation to confirm pinout compatibility and electrical tolerances. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing component selection for production.

Selection Notes

Select this component when space constraints require a matched N/P pair. Ensure the 30 V rating aligns with system voltage levels. Evaluate thermal management requirements based on the 3.57 W dissipation limit and the specific load currents expected during operation.

Part Context

This device belongs to the XP series of silicon MOSFETs manufactured by YAGEO XSemi. The series offers various configurations including single and dual channel options in packages such as SO-8 and PMPAK, designed for general-purpose switching applications.

Replacement Considerations

Check for direct substitutes like the XP3700MT. Verify that any alternative maintains identical pin assignments, voltage ratings, and thermal characteristics to ensure circuit compatibility without redesign.