XP3700MT

$1.22

Description：MOSFET N/P-CH 30V 11A PMPAK
Series：XP3700

SKU:8299c2035ce5 Category: FET, MOSFET Arrays Brand: YAGEO XSEMI

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 11A PMPAK
Series：XP3700
Mfr：YAGEO XSEMI
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 7.3A(Ta)
Rds On (Max) @ Id, Vgs：18mOhm @ 11A, 10V, 45mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：8.3nC @ 4.5V, 9.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：900pF @ 15V, 960pF @ 15V
Power - Max：3.57W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-PowerLDFN
Supplier Device Package：PMPAK® 5 x 6
Grade：-
Qualification：-

Download product information

XP3700MT

Overview

The XP3700MT is a complementary dual MOSFET from the YAGEO XSemi XP series, integrating N-channel and P-channel enhancement-mode transistors in a single PMPAK-8 surface-mount package. It features a drain-source breakdown voltage of 30 V for both channels. The N-channel configuration supports a continuous drain current of 7.3 A with an on-resistance of 18 mΩ, while the P-channel variant handles 11 A with 45 mΩ on-resistance. Gate-source voltage limits are ±20 V. Thermal performance includes a power dissipation rating of 3.57 W, operating reliably between -55°C and +150°C junction temperature.

Feature Summary

Complementary dual configuration integrates N-channel and P-channel enhancement-mode MOSFETs into a single compact component.

Applications

Low-side and high-side switching circuits requiring complementary control signals.

Procurement Notes

Verify the specific datasheet revision and electrical parameter tolerances against the manufacturer's official documentation before finalizing design specifications. Confirm that the PMPAK-8 footprint matches the target PCB layout requirements. Ensure thermal management strategies align with the stated 3.57 W power dissipation limit under expected operating conditions.

Selection Notes

Select this component when space-constrained designs require matched N-P channel pairs for bridge or half-bridge applications. The 30 V rating suits low-voltage DC-DC converters and motor drivers. Evaluate the trade-off between the N-channel's lower resistance and the P-channel's higher current capacity to ensure balanced performance within the specific circuit topology constraints.

Part Context

This device belongs to the YAGEO XSemi XP series of silicon MOSFETs. The series offers various configurations including single and dual channels in packages like SOT-23, SOT-89, and PMPAK. The XP3700MT specifically addresses needs for complementary switching in small form factors, distinguishing itself from single-channel variants through its integrated dual-transistor architecture.