XP3C011M

XP3C011M

  • Description:MOSFET N/P-CH 30V 11.2A 8SO
  • Series:XP3C011

SKU:275a7600eb3d Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET N/P-CH 30V 11.2A 8SO
  • Series:XP3C011
  • Mfr:YAGEO XSEMI
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:N and P-Channel
  • FET Feature:-
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:10.8A (Ta), 7.8A (Ta)
  • Rds On (Max) @ Id, Vgs:10mOhm @ 9A, 10V, 22mOhm @ 7A, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:16nC @ 4.5V, 20.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1440pF @ 25V, 2080pF @ 25V
  • Power - Max:2W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SO
  • Grade:-
  • Qualification:-

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XP3C011M

Overview

The XP3C011M is a dual N-channel MOSFET array manufactured by YAGEO XSemi. It features a 30V drain-source voltage rating and operates in an enhancement mode. The device provides continuous drain currents of 10.8A and 7.8A for its respective channels. Packaged in an 8-SO surface-mount configuration, it supports operation within a temperature range of -55°C to +150°C.

Feature Summary

  • Dual channel configuration for integrated circuit solutions
  • Low voltage operation suitable for power management applications
  • Surface mount packaging for automated assembly

Applications

  • Power management circuits
  • Load switching applications
  • Battery protection systems

Procurement Notes

Verify the specific datasheet version and electrical characteristics against the official YAGEO XSemi documentation before integration. Confirm that the 8-SO package dimensions and thermal requirements align with the target PCB layout and system constraints to ensure reliable performance.

Selection Notes

Select this component for designs requiring two independent N-channel switches within a compact footprint. Evaluate the combined current handling capabilities and thermal dissipation limits relative to the specific load conditions and ambient operating temperatures expected in the final application environment.

Part Context

This part belongs to the XP series of silicon MOSFETs from YAGEO XSemi. These components are designed for general-purpose switching applications, offering a balance of electrical performance and physical size. The dual configuration allows for space-efficient implementation in multi-switch scenarios.

Replacement Considerations

Consult official cross-reference data for verified substitutes. Ensure any replacement matches the 30V rating, dual N-channel topology, and 8-SO package form factor to maintain mechanical and electrical compatibility.

XP3C011MXP3C011M

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