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XP4NA2R2HCST is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists YAGEO XSEMI. Its product description is MOSFET N CH 40V 36.5A SPPAK5X6. Review the specifications below when checking this part for your BOM.
The XP4NA2R2HCST is a single N-channel enhancement mode MOSFET manufactured by YAGEO XSemi using silicon technology. It features a drain-source breakdown voltage of 40 V and supports a continuous drain current of 36.5 A. The device exhibits a low on-resistance of 2.28 mOhms, ensuring efficient power handling. It is housed in an SPPAK-5x6 surface-mount package designed for high thermal performance. The component operates within a temperature range of -55°C to +150°C and utilizes a standard 20 V gate-source voltage rating.
Verify the exact manufacturer part number against official YAGEO XSemi documentation before procurement. Confirm that the SPPAK-5x6 package matches your PCB footprint requirements. Ensure the 40V rating aligns with your circuit's maximum voltage stress. Cross-reference electrical parameters such as Rds(on) and Id with the latest datasheet to guarantee compatibility with your specific design constraints.
Select this component when a robust single N-channel switch is required for moderate voltage applications. The low on-resistance makes it suitable for efficiency-critical designs. Consider the SPPAK-5x6 package size for board space constraints. Verify that the 36.5 A current rating exceeds your peak load requirements. Ensure the operating temperature range covers your environmental conditions.
This component belongs to the XP series of MOSFETs from YAGEO XSemi, focusing on silicon-based power switching solutions. The series offers various voltage and current ratings across different packages. This specific model targets applications requiring reliable performance in compact form factors. It complements other devices in the lineup for diverse power management needs.
No public confirmed substitute part numbers are available in the provided data.
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