XP60SA290DIT

Single FETs, MOSFETs Overview

The XP60SA290DIT is a single N-channel enhancement mode MOSFET manufactured by YAGEO XSemi using silicon technology. It features a TO-252-3/2 surface-mount package and operates within a temperature range of -55°C to +150°C. Key electrical parameters include a drain-source breakdown voltage (Vds) of 600 V, a continuous drain current (Id) of 13.3 A, and a maximum gate-source voltage (Vgs) of ±20 V. The device exhibits a typical on-resistance (Rds(on)) of 290 mΩ at specified conditions, with a gate charge (Qg) of 30 nC and a threshold voltage (Vgs(th)) of 5 V. Power dissipation is rated at 2 W.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with 600 V drain-source breakdown rating for robust switching applications
• Low on-resistance design to minimize conduction losses in power circuits
• Enhanced thermal stability supporting operation up to 150°C junction temperature

Single FETs, MOSFETs Applications

• DC-DC converter circuits requiring high-voltage isolation
• Power supply switching stages
• Motor control driver interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'DIT' against official YAGEO documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the exact pinout and marking codes defined in the datasheet. Cross-reference the manufacturer part number with authorized distributor listings to confirm authenticity and traceability before procurement.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V N-channel MOSFET is required in a compact TO-252 package. Consider the 290 mΩ on-resistance and 13.3 A current rating relative to thermal management constraints. Compare gate charge characteristics against drive circuit capabilities to ensure efficient switching performance in the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the XP series of power MOSFETs from YAGEO XSemi, designed for general-purpose switching applications. The series utilizes advanced silicon planar technology to achieve low on-resistance and fast switching speeds. The TO-252 package provides a balance between thermal performance and space efficiency for surface-mount designs.

Single FETs, MOSFETs Replacement Considerations

Consult official YAGEO XSemi substitution guides for verified alternatives. Do not assume compatibility based solely on matching voltage or current ratings without verifying pinout, package dimensions, and thermal characteristics.