ZC831BTA

Overview

The ZC831BTA is a silicon hyperabrupt varactor diode from the 830 series, manufactured by Diodes Incorporated (formerly Zetex Semiconductors). It is designed for frequency control and filtering applications. The device features closely controlled capacitance-voltage characteristics and high Q factors to ensure low phase noise performance. Electrical specifications at 25°C include a nominal capacitance of 15.0 pF at 2V reverse bias and 1MHz frequency, with a minimum Q of 300 at 3V and 50MHz. The capacitance ratio (C2/C20) is specified between 4.5 and 6.0. The component is housed in an SOT-23 surface-mount package and supports an operating temperature range from -55°C to +150°C.

Feature Summary

• Hyperabrupt junction design providing steep capacitance-voltage slopes for efficient tuning
• Low reverse leakage current typically around 200pA to minimize phase noise
• High quality factor (Q) ensuring stable resonant circuit performance
• Tight manufacturing tolerances on capacitance values for consistent circuit behavior

Applications

• Voltage Controlled Crystal Oscillators (VCXO)
• Temperature Compensated Crystal Oscillators (TCXO)
• Wireless communication systems
• Mobile radio equipment

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation before procurement. The 'TA' suffix indicates packaging on 7-inch reels containing 3,000 units per reel. For 13-inch reels containing 10,000 units, the 'TC' suffix must be substituted in the order code. Confirm that the component status aligns with current production availability as product lifecycles may change.

Selection Notes

Select this component when a hyperabrupt varactor characteristic is required for wide tuning ranges in oscillator circuits. The 831B variant offers a nominal capacitance of 15.0 pF, suitable for mid-range frequency applications compared to lower or higher capacitance variants in the 830 series. Ensure the application environment remains within the -55°C to +150°C operating temperature range to maintain specified electrical parameters.

Part Context

This part belongs to the 830 series of silicon hyperabrupt varactor diodes originally developed by Zetex Semiconductors plc. The series includes various capacitance values ranging from approximately 7 pF to 100 pF across different sub-types (e.g., 829, 830, 831, 832). These devices are commonly used in RF front-end designs where precise frequency control and low noise are critical requirements.

Replacement Considerations

Direct substitutes within the same family include ZC831ATA (same device, different reel size) or other 830 series variants like ZC830BTA if capacitance adjustments are acceptable. Cross-manufacturer equivalents should be evaluated based on matching CV curves, Q factors, and breakdown voltages.