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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 1A SM8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：1A
- Rds On (Max) @ Id, Vgs：1Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：100pF @ 25V
- Power - Max：2.75W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-223-8
- Supplier Device Package：SM8
- Grade：-
- Qualification：-
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Overview
The ZDM4206NTC is a dual N-channel enhancement mode MOSFET array in an SM-8 (SOT-223) package. It features a drain-source voltage of 60V and a continuous drain current of 1A at 25°C. The device supports pulsed currents up to 8A and includes avalanche rating capabilities with repetitive energy handling of 15mJ. Static on-state resistance is specified as 1Ω at VGS=10V/ID=1.5A and 1.5Ω at VGS=5V/ID=0.5A. Total power dissipation reaches 2.75W when both dies are active equally. Thermal resistance from junction to ambient is 45.5°C/W under dual-die operation.
Feature Summary
- Dual N-channel configuration with integrated body diodes for compact circuit design
- Avalanche rated construction supporting repetitive energy absorption events
- Logic-level gate threshold enabling direct drive from standard logic outputs
- Surface-mount SM-8 packaging optimized for automated assembly processes
Applications
- Low-side switching applications in consumer electronics
- DC motor control circuits requiring dual channel isolation
- Power management modules utilizing avalanche robustness
- General purpose signal switching in embedded systems
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm package variant and tape-and-reel specifications. Confirm RoHS compliance status through official datasheets or component certification records before integration into regulated assemblies. Ensure storage conditions adhere to moisture sensitivity level requirements during handling.
Selection Notes
Evaluate thermal performance based on PCB copper area and mounting orientation, as power dissipation ratings assume typical board configurations. Compare gate charge characteristics against driver capabilities to ensure adequate switching speeds. Verify that peak pulsed current demands remain within the 8A limit to prevent device degradation over time.
Part Context
This component belongs to the ZDM4206N family of dual N-channel MOSFET arrays manufactured by Diodes Incorporated. The series provides integrated solutions for space-constrained designs requiring two independent switching channels. The SM-8 package offers a balance between thermal performance and footprint efficiency compared to larger discrete packages.
Replacement Considerations
No official substitute part numbers are documented in the provided source material. When selecting alternatives, verify pin compatibility, voltage ratings, and thermal characteristics match the original design constraints.
