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The ZMS2800TC is a silicon signal Schottky barrier diode manufactured by Diodes Incorporated, housed in the SOD323 miniature surface mount package. It features pico-second switching speed and high breakdown voltage characteristics suitable for RF applications. Key electrical parameters at 25°C include a breakdown voltage of 70V with 10μA reverse current, a maximum reverse leakage current of 200nA at 50V, and a forward voltage of 410mV at 1mA forward current. The device supports a peak forward current of 1A (1μs pulse) and dissipates up to 250mW at ambient temperature. Operating and storage temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against manufacturer documentation to confirm tape and reel specifications or marking codes. Ensure the component matches the required RoHS compliance status and environmental certifications before finalizing procurement orders.
Select this component for designs requiring fast switching speeds and low forward voltage drops in compact surface mount layouts. Evaluate thermal management requirements as power dissipation is limited to 250mW at 25°C ambient temperature.
This part belongs to the ZMS2800 series of Schottky barrier diodes produced by Diodes Incorporated. The series includes variants such as ZMS2811 and ZMS5800, which share similar packaging but differ in breakdown voltage ratings. All members utilize the SOD323 package format.
Cross-reference with other SOD323 Schottky diodes offering comparable breakdown voltages and switching speeds. Verify pinout compatibility and thermal performance metrics when substituting.
The datasheet lists capacitance values for the ZC2800E variant as 1.2pF under zero bias at 1MHz.
The effective minority lifetime is specified as 100ps for the ZC2800E variant at 54MHz frequency and 20mA peak current.
Typical characteristics graphs show that forward voltage decreases as ambient temperature increases from -55°C to +150°C.