ZTX415

Single Bipolar Transistors Overview

The ZTX415 is an NPN silicon planar medium power avalanche transistor manufactured by Diodes Incorporated. It features a collector-base voltage of 260 V and a collector-emitter breakdown voltage exceeding 100 V. The device supports a continuous collector current of 500 mA and delivers a peak avalanche current of 60 A with a pulse width of 20 ns. Power dissipation is rated at 680 mW, with a transition frequency of 40 MHz. It operates within a temperature range of -55°C to 150°C.

Single Bipolar Transistors Feature Summary

• Specifically designed for operation in avalanche mode
• Capable of generating high-current pulses with fast edges
• Utilizes low inductance E-Line packaging

Single Bipolar Transistors Applications

• Laser diode drivers for ranging and measurement (LiDAR)
• Radar systems
• Fast edge switch generators
• High-speed pulse generators

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix required for your application, as bulk and tape options exist. Confirm that the component meets RoHS 3 and REACH standards if environmental compliance is mandatory. Check for automotive qualification requirements such as AEC-Q100/101 or PPAP capability, which necessitate contacting the manufacturer directly. Ensure the design accounts for the device's status regarding new design recommendations.

Single Bipolar Transistors Selection Notes

Select this component when high-voltage avalanche switching is required rather than standard linear amplification. The E-Line package provides a robust mechanical solution for through-hole mounting while maintaining low lead inductance. Consider the thermal resistance characteristics and ensure adequate heat sinking for steady-state operations near the maximum power dissipation limit.

Single Bipolar Transistors Part Context

This part belongs to the ZTX series of NPN silicon planar transistors from Diodes Incorporated. It shares functional similarities with other avalanche transistors like the FMMT417 but utilizes a distinct E-Line package instead of surface-mount formats. The series is engineered for applications demanding precise control over avalanche breakdown characteristics and rapid pulse generation capabilities.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Single Bipolar Transistors FAQ

What is the maximum peak avalanche current supported by the ZTX415?

The ZTX415 supports a peak collector current of 60 A with a pulse width of 20 ns.

Is the ZTX415 suitable for linear amplifier applications?

No, the ZTX415 is specifically designed for avalanche mode operation and is not recommended for standard linear amplifier use.

What is the collector-emitter breakdown voltage rating?

The collector-emitter breakdown voltage (BVCEO) is greater than 100 V.