ZTX557STZ

Single Bipolar Transistors Overview

The ZTX557STZ is a PNP silicon planar medium power high voltage transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage of -300 V and supports a continuous collector current of -0.5 A with a peak pulse current of -1 A. The device operates within a temperature range of -55°C to +200°C and dissipates up to 1.0 W of power. Key electrical characteristics include a transition frequency of 75 MHz, a collector-emitter saturation voltage of -0.3 V at specified currents, and a static forward current transfer ratio (hFE) ranging from 50 to 300.

Single Bipolar Transistors Feature Summary

• High voltage capability with a -300 V collector-emitter breakdown rating for robust operation in demanding circuits.
• Medium power handling with a 1.0 W power dissipation limit suitable for various switching and amplification tasks.
• Wide operating temperature range extending up to +200°C for reliability under thermal stress.

Single Bipolar Transistors Applications

• High voltage switching applications
• Linear amplifier circuits
• Power supply regulation

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm RoHS compliance status through the latest datasheet or environmental declaration. Cross-reference the part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand high voltage tolerance combined with moderate current handling capabilities. The E-Line TO-92 compatible package facilitates through-hole mounting. Ensure that the required hFE gain and switching speed parameters align with the design specifications, particularly noting the 75 MHz transition frequency limit.

Single Bipolar Transistors Part Context

This component belongs to the ZTX556/ZTX557 series of PNP silicon planar transistors designed for medium power and high voltage applications. The series is characterized by its robust construction and wide thermal operating range, making it distinct from lower voltage general-purpose transistors in the same product family.

Single Bipolar Transistors Replacement Considerations

The ZTX556 serves as a related variant within the same series but offers a lower -200 V collector-base and collector-emitter voltage rating compared to the -300 V rating of the ZTX557. Verify voltage margins carefully if substituting between these two models.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the ZTX557?

The maximum collector-emitter breakdown voltage (VCEO) is -300 V.

Does the ZTX557 support through-hole mounting?

Yes, it is available in an E-Line package that is TO-92 compatible, which supports through-hole installation.

What is the typical transition frequency of this transistor?

The transition frequency (fT) is specified as 75 MHz at a collector current of -50 mA and VCE of -10 V.