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ZTX603 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN DARL 80V 1A E-LINE. Review the specifications below when checking this part for your BOM.
The ZTX603 is an NPN silicon planar medium power Darlington transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage of 80 V and supports a continuous collector current of 1 A. The device provides a minimum static forward current transfer ratio (hFE) of 2,000 at a collector current of 1 A. Power dissipation is rated at 1 W at 25°C ambient temperature, with a derating factor of 5.7 mW/°C above this threshold. The transition frequency is specified at 150 MHz.
Verify the specific package variant against the datasheet, as the ZTX603 family includes through-hole and surface-mount options. Confirm RoHS compliance status and check for any recent production change notices regarding assembly sites or wafer sources to ensure supply chain consistency.
Select the ZTX603 when a high current gain is required to drive moderate loads directly from logic outputs. Ensure the operating voltage remains below the 80 V collector-emitter limit. Consider thermal management requirements if the device operates near its maximum power dissipation rating in enclosed environments.
This component belongs to the ZTX series of NPN silicon planar medium power Darlington transistors produced by Diodes Incorporated. The series is engineered to provide high gain and robust performance for general-purpose electronic designs requiring efficient current control.
The ZTX602 is a related part within the same series offering similar characteristics but with a lower collector-emitter voltage rating of 60 V compared to the 80 V rating of the ZTX603.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.