ZTX658QSTZ

Single Bipolar Transistors Overview

The ZTX658QSTZ is an NPN silicon small-signal bipolar junction transistor manufactured by Diodes Incorporated. It features a maximum collector current of 0.5 A and a collector-emitter breakdown voltage of 400 V. The device utilizes an E-Line-3 package, which is compatible with the TO-92 form factor, designed for through-hole mounting. It operates within a temperature range of -55°C to +150°C and meets automotive qualification standards.

Single Bipolar Transistors Feature Summary

• High voltage capability with 400V collector-emitter breakdown
• Automotive-grade reliability and qualification
• Through-hole E-Line (TO-92 compatible) packaging

Single Bipolar Transistors Applications

• Automotive electronic systems
• General-purpose switching applications
• Amplifier circuits requiring high voltage tolerance

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'QSTZ' against official manufacturer documentation to confirm automotive qualification status and tape-and-reel packaging details. Ensure compatibility with existing PCB footprints for E-Line-3 packages before procurement.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring robust NPN switching at high voltages up to 400V. The automotive qualification makes it suitable for harsh environments. Verify that the 0.5A current rating and thermal characteristics meet the specific circuit requirements.

Single Bipolar Transistors Part Context

This part belongs to the ZTX series of bipolar transistors from Diodes Incorporated, known for high-voltage performance in compact packages. The Q suffix typically denotes automotive grade compliance, while STZ indicates the specific reel packaging configuration.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for equivalent NPN transistors with matching 400V ratings and 0.5A current capacity. Verify pinout compatibility for E-Line-3 packages when considering alternatives.